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This volume contains full proceedings of the Fourth International
Conference on Secondary Ion Mass Spectrometry (SIMS-IV), held in
the Minoo-Kanko Hotel, Osaka, Japan, from November 13th to 19th,
1983. Coordinated by a local or ganizing committee under the
auspices of the international organizing com mittee, it followed
earlier conferences held in MUnster (1977), Stanford (1979), and
Budapest (1981). The conference was attended by about 250
participants from 18 countries, and 130 papers including 24 invited
ones were presented. Reflecting the rap idly expanding activities
in the SIMS field, informative papers were pre sented containing
up-to-date information on SIMS and various related fields. The
proceedings focussed upon six main issues: (1) Fundamentals of sput
tering and secondary ion formation. (2) Recent progress in
instrumentation, including submicron SIMS and image processing. (3)
SIMS combined with other surface analysis techniques. (4)
Outstanding SIMS-related analytical methods such as
laser-microprobe SIMS, sputtered neutral mass spectrometry, mass
spectrometry of sputtered neutrals by multi-photon resonance
ionization, and accelerator-based SIMS. (5) Organic SIMS and FAB
which has recently become a rapidly expanding technique in
pharmacy, biotechnology, etc. (6) Appl ica tions of SIMS to various
fields such as metallurgy, geology, and biology, including depth
profiling of semiconductors, and analysis of inorganic mate rials.
As a venue for the exchange of ideas and information concerning all
the above issues, the conference proved a great success."
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