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Just over 25 years ago the first laser-excited Raman spectrum of
any crystal was obtained. In November 1964, Hobden and Russell
reported the Raman spectrum of GaP and later, in June 1965, Russell
published the Si spectrum. Then, in July 1965, the forerunner of a
series of meetings on light scattering in solids was held in Paris.
Laser Raman spectroscopy of semiconductors was at the forefront in
new developments at this meeting. Similar meetings were held in
1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and
apart from the multidisciplinary biennial International Conference
on Raman Spectroscopy there has been no special forum for experts
in light scattering spectroscopy of semiconductors to meet and
discuss latest developments. Meanwhile, technological advances in
semiconductor growth have given rise to a veritable renaissance in
the field of semiconductor physics. Light scattering spectroscopy
has played a crucial role in the advancement of this field,
providing valuable information about the electronic, vibrational
and structural properties both of the host materials, and of
heterogeneous composite structures. On entering a new decade, one
in which technological advances in lithography promise to open even
broader horirons for semiconductor physics, it seemed to us to be
an ideal time to reflect on the achievements of the past decade, to
be brought up to date on the current state-of-the-art, and to catch
some glimpses of where the field might be headed in the 1990s.
Just over 25 years ago the first laser-excited Raman spectrum of
any crystal was obtained. In November 1964, Hobden and Russell
reported the Raman spectrum of GaP and later, in June 1965, Russell
published the Si spectrum. Then, in July 1965, the forerunner of a
series of meetings on light scattering in solids was held in Paris.
Laser Raman spectroscopy of semiconductors was at the forefront in
new developments at this meeting. Similar meetings were held in
1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and
apart from the multidisciplinary biennial International Conference
on Raman Spectroscopy there has been no special forum for experts
in light scattering spectroscopy of semiconductors to meet and
discuss latest developments. Meanwhile, technological advances in
semiconductor growth have given rise to a veritable renaissance in
the field of semiconductor physics. Light scattering spectroscopy
has played a crucial role in the advancement of this field,
providing valuable information about the electronic, vibrational
and structural properties both of the host materials, and of
heterogeneous composite structures. On entering a new decade, one
in which technological advances in lithography promise to open even
broader horirons for semiconductor physics, it seemed to us to be
an ideal time to reflect on the achievements of the past decade, to
be brought up to date on the current state-of-the-art, and to catch
some glimpses of where the field might be headed in the 1990s.
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