This book is the first to explain FinFET modeling for IC simulation and the industry standard for FinFET modeling BSIM-CMG. It gives a foundation on the physics and operation of FinFET, explaining the need to go from planar to 3D architecture. It then covers detailed aspects of the BSIMCMG model such as surface potential, charge and current calculations. A dedicated chapter on parameter extraction procedures provides a step-by-step approach for the efficient extraction of model parameters. This book is an indispensible reference and handbook for device and modeling engineers, circuit designers and students. With this book you will learn: Why you should use FinFET The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG) Parameter extraction in BSIM-CMG FinFET circuit design and simulation
Chenming Hu is the lead inventor and developer of FinFET
The first book on the industry-standard FinFET model - BSIM-CMG
The authors are developers of the BSIM-CM standard model, providing an Experts insight into the specifications of the standard"

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.