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This book is the first to explain FinFET modeling for IC
simulation and the industry standard for FinFET modeling BSIM-CMG.
It gives a foundation on the physics and operation of FinFET,
explaining the need to go from planar to 3D architecture. It then
covers detailed aspects of the BSIMCMG model such as surface
potential, charge and current calculations. A dedicated chapter on
parameter extraction procedures provides a step-by-step approach
for the efficient extraction of model parameters. This book is an
indispensible reference and handbook for device and modeling
engineers, circuit designers and students. With this book you will
learn: Why you should use FinFET The physics and operation of
FinFET Details of the FinFET standard model (BSIM-CMG) Parameter
extraction in BSIM-CMG FinFET circuit design and simulation
Chenming Hu is the lead inventor and developer of FinFET
The first book on the industry-standard FinFET model -
BSIM-CMG
The authors are developers of the BSIM-CM standard model,
providing an Experts insight into the specifications of the
standard"
Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps
readers develop an understanding of a FDSOI device and its
simulation model. It covers the physics and operation of the FDSOI
device, explaining not only how FDSOI enables further scaling, but
also how it offers unique possibilities in circuits. Following
chapters cover the industry standard compact model BSIM-IMG for
FDSOI devices. The book addresses core surface-potential
calculations and the plethora of real devices and potential
effects. Written by the original developers of the industrial
standard model, this book is an excellent reference for the new
BSIM-IMG compact model for emerging FDSOI technology. The authors
include chapters on step-by-step parameters extraction procedure
for BSIM-IMG model and rigorous industry grade tests that the
BSIM-IMG model has undergone. There is also a chapter on analog and
RF circuit design in FDSOI technology using the BSIM-IMG model.
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