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Current leading-edge CMOS transistors are about as small as they
will get. We now have a simple, clear, very physical understanding
of how these devices function, but it has not yet entered our
textbooks. Besides, CMOS logic transistors, power transistors are
increasingly important as are III-V heterostructure transistors for
high-frequency communication. Transistor reliability is also
important but rarely treated in introductory textbooks.As we begin
a new era, in which making transistors smaller will no longer be a
major driving force for progress, it is time to look back at what
we have learned in transistor research. Today we see a need to
convey as simply and clearly as possible the essential physics of
the device that makes modern electronics possible. That is the goal
of these lectures. This volume rearranges the familiar topics and
distills the most essential among them, while adding most recent
approaches which have become crucial to the discussion. To follow
the lectures, readers need only a basic understanding of
semiconductor physics. Familiarity with transistors and electronic
circuits is helpful, but not assumed.
Current leading-edge CMOS transistors are about as small as they
will get. We now have a simple, clear, very physical understanding
of how these devices function, but it has not yet entered our
textbooks. Besides, CMOS logic transistors, power transistors are
increasingly important as are III-V heterostructure transistors for
high-frequency communication. Transistor reliability is also
important but rarely treated in introductory textbooks.As we begin
a new era, in which making transistors smaller will no longer be a
major driving force for progress, it is time to look back at what
we have learned in transistor research. Today we see a need to
convey as simply and clearly as possible the essential physics of
the device that makes modern electronics possible. That is the goal
of these lectures. This volume rearranges the familiar topics and
distills the most essential among them, while adding most recent
approaches which have become crucial to the discussion. To follow
the lectures, readers need only a basic understanding of
semiconductor physics. Familiarity with transistors and electronic
circuits is helpful, but not assumed.
The transistor is the key enabler of modern electronics. Progress
in transistor scaling has pushed channel lengths to the nanometer
regime where traditional approaches to device physics are less and
less suitable. These lectures describe a way of understanding
MOSFETs and other transistors that is much more suitable than
traditional approaches when the critical dimensions are measured in
nanometers. It uses a novel, "bottom-up approach" that agrees with
traditional methods when devices are large, but that also works for
nano-devices. Surprisingly, the final result looks much like the
traditional, textbook, transistor models, but the parameters in the
equations have simple, clear interpretations at the nanoscale. The
objective is to provide readers with an understanding of the
essential physics of nanoscale transistors as well as some of the
practical technological considerations and fundamental limits. This
book is written in a way that is broadly accessible to students
with only a very basic knowledge of semiconductor physics and
electronic circuits.
The transistor is the key enabler of modern electronics. Progress
in transistor scaling has pushed channel lengths to the nanometer
regime where traditional approaches to device physics are less and
less suitable. These lectures describe a way of understanding
MOSFETs and other transistors that is much more suitable than
traditional approaches when the critical dimensions are measured in
nanometers. It uses a novel, "bottom-up approach" that agrees with
traditional methods when devices are large, but that also works for
nano-devices. Surprisingly, the final result looks much like the
traditional, textbook, transistor models, but the parameters in the
equations have simple, clear interpretations at the nanoscale. The
objective is to provide readers with an understanding of the
essential physics of nanoscale transistors as well as some of the
practical technological considerations and fundamental limits. This
book is written in a way that is broadly accessible to students
with only a very basic knowledge of semiconductor physics and
electronic circuits.
These lectures are designed to introduce students to the
fundamentals of carrier transport in nano-devices using a novel,
"bottom up approach" that agrees with traditional methods when
devices are large, but which also works for nano-devices. The goal
is to help students learn how to think about carrier transport at
the nanoscale and also how the bottom up approach provides a new
perspective to traditional concepts like mobility and drift-
diffusion equations. The lectures are designed for engineers and
scientists and others who need a working knowledge of near-
equilibrium ("low-field" or "linear") transport. Applications of
the theory and measurement considerations are also addressed. The
lectures serve as a starting point to an extensive set of
instructional materials available online.
These lectures are designed to introduce students to the
fundamentals of carrier transport in nano-devices using a novel,
"bottom up approach" that agrees with traditional methods when
devices are large, but which also works for nano-devices. The goal
is to help students learn how to think about carrier transport at
the nanoscale and also how the bottom up approach provides a new
perspective to traditional concepts like mobility and drift-
diffusion equations. The lectures are designed for engineers and
scientists and others who need a working knowledge of near-
equilibrium ("low-field" or "linear") transport. Applications of
the theory and measurement considerations are also addressed. The
lectures serve as a starting point to an extensive set of
instructional materials available online.
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