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This book provides comprehensive coverage of the new wide-bandgap
semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much
attention due to its excellent materials properties. It features an
extremely large bandgap of greater than 4.5 eV and availability of
large-size, high-quality native substrates produced from melt-grown
bulk single crystals. Ga2O3 is thus a rising star among
ultra-wide-bandgap semiconductors and represents a key emerging
research field for the worldwide semiconductor community. Expert
chapters cover physical properties, synthesis, and state-of-the-art
applications, including materials properties, growth techniques of
melt-grown bulk single crystals and epitaxial thin films, and many
types of devices. The book is an essential resource for academic
and industry readers who have an interest in, or plan to start, a
new R&D project related to Ga2O3.
This book provides comprehensive coverage of the new wide-bandgap
semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much
attention due to its excellent materials properties. It features an
extremely large bandgap of greater than 4.5 eV and availability of
large-size, high-quality native substrates produced from melt-grown
bulk single crystals. Ga2O3 is thus a rising star among
ultra-wide-bandgap semiconductors and represents a key emerging
research field for the worldwide semiconductor community. Expert
chapters cover physical properties, synthesis, and state-of-the-art
applications, including materials properties, growth techniques of
melt-grown bulk single crystals and epitaxial thin films, and many
types of devices. The book is an essential resource for academic
and industry readers who have an interest in, or plan to start, a
new R&D project related to Ga2O3.
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