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Ferroelectric materials have a wide range of applications in making
of ferroelectric capacitors, ferroelectric random access memories,
non volatile random access memories, dynamic random access
memories, metal ferroelectric semiconductor field effect
transistors, microelectronic mechanical systems, sensors,
actuators, tunable resonators, variable frequency oscillators and
transducers. The most of these devices need low voltage operation,
therefore, a ferroelectric material possessing low coercive field
in thin film form is essential. This book provides the vital
information to fabricate the spray deposited composite films of
ferroelectric material embedded in polymer matrix, which have low
coercive field. The structural, ferroelectric, back switching,
current density - electric field, switching kinetics, dielectric,
capacitance - voltage, conductance - voltage studied on the
composite films of KNO3: PVA have been presented & interpreted.
The analysis of switching kinetics of these composite films with
application of nucleation limited switching model has also been
discussed. On the whole, this book explore the possibilities to use
these composite films in the future memory devices.
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