Recent advances in the growth of novel-engineered structures such as sophisticated semiconductor superlattices and heterostructures, as well as new nonlinear optical materials, have opened exciting possibilities for infrared sources, detectors, modulators and novel devices. Brought to maturity, such discrete devices could likely see widespread use in applications as diverse as infrared imaging, chemical sensing, surveillance, short-link and high-bandwidth communications. This book published by MRS, brings together a group of internationally recognized experts in the field to discuss recent progress in materials, physics, processing and device design and performance. Developments in materials for cooled and uncooled infrared systems based on pyroelectric, micro-bolometric, photovoltaic and photoconductive detectors are emphasized. Progress in compact infrared sources is also highlighted. Topics include: antimonide-related materials - growth, characterization and analysis; antimonide-related devices; innovative infrared devices; infrared detectors; growth and doping of II-VI materials; interdiffusion in quantum-well materials and infrared applications; nonlinear optical and OPO materials and related contributions.

Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product. This comprehensive text is aimed at graduate level students and researchers, breaking down the complexities of fabrication, use, and maintenance of heterojunctions. Topics include: introduction to quantum mechanics, Potential barriers and wells, electronic energy levels in periodic potentials, tunneling through potential barriers, distribution functions and density of states, optical properties of interband and intersubband transitions, electrical properties, techniques and measurements, growth issues, devices: Detectors and emitters.

This volume is focused on the growth techniques for III-Nitrides featuring chapters written by leading experts in the field. This unique volume provides a comprehensive review and introduction to growth issues, substrates and characterization of GaN and related compounds for newcomers to the field and stimulus for further advances for experienced researchers.
The technical chapters in this volume are focused on various aspects of growth modes, growth techniques such as molecular beam epitaxy, metalorganic chemical vapor deposition, metalorganic vapor phase epitaxy, epitaxial lateral overgrowth, hydride vapor phase epitaxial growth, as well as substrate issues and characterization results.