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This work represents the account of a NATO Advanced Research
Workshop on "Thin Film Growth Techniques for Low Dimensional
Structures," held at the University of Sussex, Brighton, England
from 15-19 Sept. 1986. The objective of the workshop was to review
the problems of the growth and characterisation of thin
semiconductor and metal layers. Recent advances in deposition
techniques have made it possible to design new material which is
based on ultra-thin layers and this is now posing challenges for
scientists, technologists and engineers in the assessment and
utilisation of such new material. Molecular beam epitaxy (MBE) has
become well established as a method for growing thin single crystal
layers of semiconductors. Until recently, MBE was confined to the
growth of III-V compounds and alloys, but now it is being used for
group IV semiconductors and II-VI compounds. Examples of such work
are given in this volume. MBE has one major advantage over other
crystal growth techniques in that the structure of the growing
layer can be continuously monitored using reflection high energy
electron diffraction (RHEED). This technique has offered a rare
bonus in that the time dependent intensity variations of RHEED can
be used to determine growth rates and alloy composition rather
precisely. Indeed, a great deal of new information about the
kinetics of crystal growth from the vapour phase is beginning to
emerge.
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