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Defects in Nanocrystals: Structural and Physico-Chemical Aspects
discusses the nature of semiconductor systems and the effect of the
size and shape on their thermodynamic and optoelectronic properties
at the mesoscopic and nanoscopic levels. The nanostructures
considered in this book are individual nanometric crystallites,
nanocrystalline films, and nanowires of which the thermodynamic,
structural, and optical properties are discussed in detail. The
work: Outlines the influence of growth processes on their
morphology and structure Describes the benefits of optical
spectroscopies in the understanding of the role and nature of
defects in nanostructured semiconductors Considers the limits of
nanothermodynamics Details the critical role of interfaces in
nanostructural behavior Covers the importance of embedding media in
the physico-chemical properties of nanostructured semiconductors
Explains the negligible role of core point defects vs. surface and
interface defects Written for researchers, engineers, and those
working in the physical and physicochemical sciences, this work
comprehensively details the chemical, structural, and optical
properties of semiconductor nanostructures for the development of
more powerful and efficient devices.
Despite the vast knowledge accumulated on silicon, germanium, and
their alloys, these materials still demand research, eminently in
view of the improvement of knowledge on silicon-germanium alloys
and the potentialities of silicon as a substrate for
high-efficiency solar cells and for compound semiconductors and the
ongoing development of nanodevices based on nanowires and nanodots.
Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities,
and Nanocrystals covers the entire spectrum of R&D activities
in silicon, germanium, and their alloys, presenting the latest
achievements in the field of crystal growth, point defects,
extended defects, and impurities of silicon and germanium
nanocrystals. World-recognized experts are the authors of the
book's chapters, which span bulk, thin film, and nanostructured
materials growth and characterization problems, theoretical
modeling, crystal defects, diffusion, and issues of key applicative
value, including chemical etching as a defect delineation
technique, the spectroscopic analysis of impurities, and the use of
devices as tools for the measurement of materials quality.
Polycrystalline silicon (commonly called "polysilicon") is the
material of choice for photovoltaic (PV) applications. Polysilicon
is the purest synthetic material on the market, though its
processing through gas purification and decomposition (commonly
called "Siemens" process) carries high environmental risk. While
many current optoelectronic applications require high purity, PV
applications do not and therefore alternate processes and materials
are being explored for PV grade silicon. Solar Silicon Processes:
Technologies, Challenges, and Opportunities reviews current and
potential future processing technologies for PV applications of
solar silicon. It describes alternative processes and issues of
material purity, cost, and environmental impact. It covers limits
of silicon use with respect to high-efficiency solar cells and
challenges arising from R&D activities. The book also defines
purity requirements and purification processes of metallurgical
grade silicon (MG-Si) and examines production of solar grade
silicon by novel processes directly from MG-Si and/or by
decomposition of silane gas in a fluidized bed reactor (FBR).
Furthermore, the book: Analyzes past research and industrial
development of low-cost silicon processes in view of understanding
future trends in this field. Discusses challenges and probability
of success of various solar silicon processes. Covers processes
that are more environmentally sensitive. Describes limits of
silicon use with respect to high-efficiency solar cells and
challenges arising from R&D activities. Defines purity
requirements and purification processes of MG-Si. Examines
production of solar grade silicon directly from MG-Si.
Defects in Nanocrystals: Structural and Physico-Chemical Aspects
discusses the nature of semiconductor systems and the effect of the
size and shape on their thermodynamic and optoelectronic properties
at the mesoscopic and nanoscopic levels. The nanostructures
considered in this book are individual nanometric crystallites,
nanocrystalline films, and nanowires of which the thermodynamic,
structural, and optical properties are discussed in detail. The
work: Outlines the influence of growth processes on their
morphology and structure Describes the benefits of optical
spectroscopies in the understanding of the role and nature of
defects in nanostructured semiconductors Considers the limits of
nanothermodynamics Details the critical role of interfaces in
nanostructural behavior Covers the importance of embedding media in
the physico-chemical properties of nanostructured semiconductors
Explains the negligible role of core point defects vs. surface and
interface defects Written for researchers, engineers, and those
working in the physical and physicochemical sciences, this work
comprehensively details the chemical, structural, and optical
properties of semiconductor nanostructures for the development of
more powerful and efficient devices.
Silicon, germanium, and compound semiconductors, among which
silicon carbide, gallium arsenide and gallium nitride are the most
representative examples, play a withstanding role in the world
economy, since they were and still are the keys for the advancement
of modern microelectronics and optoelectronics, with a wealth of
sister technologies relevant for renewable energy solutions
and advanced spectroscopy applications. This textbook will
cover the synthesis, spectroscopic characterisation and
optimisation of semiconductor materials, accounting for the most
recent developments in the field of nanomaterials. It will be of
great interest for scholars and instructors to have the chance to
look at semiconductor science with a basic chemical approach.
Homopolar semiconductors (silicon and germanium) are examined
first, considering the role of these materials in modern
microelectronics and in photovoltaics. Compound semiconductors (for
example, carbides, arsenides, tellurides, nitrides) are also
discussed in detail, considering that the chemistry of their
preparation is even more critical and their role in photonic
applications is strategic. Authored by a leading expert in the
field, this easily accessible text is appropriate for advanced
undergraduates and postgraduates studying materials science and
technology.
Polycrystalline silicon (commonly called "polysilicon") is the
material of choice for photovoltaic (PV) applications. Polysilicon
is the purest synthetic material on the market, though its
processing through gas purification and decomposition (commonly
called "Siemens" process) carries high environmental risk. While
many current optoelectronic applications require high purity, PV
applications do not and therefore alternate processes and materials
are being explored for PV grade silicon. Solar Silicon Processes:
Technologies, Challenges, and Opportunities reviews current and
potential future processing technologies for PV applications of
solar silicon. It describes alternative processes and issues of
material purity, cost, and environmental impact. It covers limits
of silicon use with respect to high-efficiency solar cells and
challenges arising from R&D activities. The book also defines
purity requirements and purification processes of metallurgical
grade silicon (MG-Si) and examines production of solar grade
silicon by novel processes directly from MG-Si and/or by
decomposition of silane gas in a fluidized bed reactor (FBR).
Furthermore, the book: Analyzes past research and industrial
development of low-cost silicon processes in view of understanding
future trends in this field. Discusses challenges and probability
of success of various solar silicon processes. Covers processes
that are more environmentally sensitive. Describes limits of
silicon use with respect to high-efficiency solar cells and
challenges arising from R&D activities. Defines purity
requirements and purification processes of MG-Si. Examines
production of solar grade silicon directly from MG-Si.
Despite the vast knowledge accumulated on silicon, germanium, and
their alloys, these materials still demand research, eminently in
view of the improvement of knowledge on silicon-germanium alloys
and the potentialities of silicon as a substrate for
high-efficiency solar cells and for compound semiconductors and the
ongoing development of nanodevices based on nanowires and nanodots.
Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities,
and Nanocrystals covers the entire spectrum of R&D activities
in silicon, germanium, and their alloys, presenting the latest
achievements in the field of crystal growth, point defects,
extended defects, and impurities of silicon and germanium
nanocrystals. World-recognized experts are the authors of the
book's chapters, which span bulk, thin film, and nanostructured
materials growth and characterization problems, theoretical
modeling, crystal defects, diffusion, and issues of key applicative
value, including chemical etching as a defect delineation
technique, the spectroscopic analysis of impurities, and the use of
devices as tools for the measurement of materials quality.
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