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GaN Transistor Modeling for RF and Power Electronics: Using The
ASM-GaN-HEMT Model covers all aspects of characterization and
modeling of GaN transistors for both RF and Power electronics
applications. Chapters cover an in-depth analysis of the industry
standard compact model ASM-HEMT for GaN transistors. The book
details the core surface-potential calculations and a variety of
real device effects, including trapping, self-heating, field plate
effects, and more to replicate realistic device behavior. The
authors also include chapters on step-by-step parameter extraction
procedures for the ASM-HEMT model and benchmark test results. GaN
is the fastest emerging technology for RF circuits as well as power
electronics. This technology is going to grow at an exponential
rate over the next decade. This book is envisioned to serve as an
excellent reference for the emerging GaN technology, especially for
circuit designers, materials science specialists, device engineers
and academic researchers and students.
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