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Low Power VLSI Design - Fundamentals (Hardcover, Digital original): Angsuman Sarkar, Swapnadip De, Manash Chanda, Chandan Kumar... Low Power VLSI Design - Fundamentals (Hardcover, Digital original)
Angsuman Sarkar, Swapnadip De, Manash Chanda, Chandan Kumar Sarkar
R6,655 Discovery Miles 66 550 Ships in 10 - 15 working days

This book teaches basic and advanced concepts, new methodologies and recent developments in VLSI technology with a focus on low power design. It provides insight on how to use Tanner Spice, Cadence tools, Xilinx tools, VHDL programming and Synopsis to design simple and complex circuits using latest state-of-the art technologies. Emphasis is placed on fundamental transistor circuit-level design concepts.

Revisão dos MOSFETs não convencionais: Swapnadip De Revisão dos MOSFETs não convencionais
Swapnadip De
R1,570 Discovery Miles 15 700 Ships in 10 - 15 working days
Review of non conventional MOSFETs: Swapnadip De Review of non conventional MOSFETs
Swapnadip De
R1,567 Discovery Miles 15 670 Ships in 10 - 15 working days
Remedies of Short Channel Effects in Conventional MOSFET (Paperback): Swapnadip De, Debarati Das, Chandan Kumar Sarkar Remedies of Short Channel Effects in Conventional MOSFET (Paperback)
Swapnadip De, Debarati Das, Chandan Kumar Sarkar
R964 Discovery Miles 9 640 Ships in 10 - 15 working days
Channel And Gate Engineered Double Gate MOSFET (Paperback): Swapnadip De, Manash Chanda, Chandan Kumar Sarkar Channel And Gate Engineered Double Gate MOSFET (Paperback)
Swapnadip De, Manash Chanda, Chandan Kumar Sarkar
R1,312 Discovery Miles 13 120 Ships in 10 - 15 working days
Surface potential of Dual Material Gate MOSFET with high-k dielectrics (Paperback): Swapnadip De Surface potential of Dual Material Gate MOSFET with high-k dielectrics (Paperback)
Swapnadip De
R960 Discovery Miles 9 600 Ships in 10 - 15 working days

The shrinking of device dimension leads to reduction of gate oxide thickness. As a result of this the undesirable hot electron effect and the gate tunneling current is increased. In order to overcome this drawback high-k materials are used instead of silicon dioxide as the insulating material underneath the gate. High-k dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric.Among various high-k materials, Hafnium oxide (HfO2), Tantalum pent oxide (Ta2O5) these materials appear to be the candidates for replacing silicon oxide. These high-k dielectrics exhibit a trend of decreasing barrier height with increasing dielectric constant.The high-k materials with far higher permittivity create same gate capacitance for thicker dielectric. In this book the main focus has been on the modeling and the influence of depletion layers around the source and the drain regions on the sub threshold surface potential of a short-channel DMG MOS transistor with a uniformly-doped channel.

Spread Spectrum System (Paperback): Swapnadip De Spread Spectrum System (Paperback)
Swapnadip De
R1,278 Discovery Miles 12 780 Ships in 10 - 15 working days

A major issue of concern in the study of digital communication is to provide a form of secure and interference free communication system in a hostile environment. This requirement is catered by a class of signaling techniques known as SPREAD SPECTRUM MODULATION. In this technique the transmitted signal spectrum is spread over a frequency range much greater than the message bandwidth . The spectrum is accomplished before the transmission through the use of code that is independent of data sequence. The same code is used in the receiver (operating synchronously with the transmitter) to de-spread the received signal so that the original message is recovered.

Parameter modeling of submicron mosfet (Paperback): Swapnadip De Parameter modeling of submicron mosfet (Paperback)
Swapnadip De
R1,280 Discovery Miles 12 800 Ships in 10 - 15 working days
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