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Zinc oxide (ZnO) thin films have good electro-optical properties
suitable for opto-electronic applications. The present study
explains the deposition and characterization of n-type and p-type
ZnO thin films by spray pyrolysis. The films were characterized by
different methods to understand their structural, optical and
electrical properties. Gallium was chosen as the impurity dopant in
ZnO films to improve the electrical properties. The electrical
conductivity, carrier concentration and mobility of Ga doped ZnO
(GZO) films were highly improved in comparison to undoped ZnO
films. The GZO films showed good optical transmittance in the
visible region. The electrical and optical results suggest that the
GZO films are suitable to use as a TCO in optoelectronic
industries. The p-type ZnO thin films were successesfully realized
using dual acceptor method. The Hall measurements and room
temperature photolumiscence results were supported p-type nature of
(Li, N): ZnO thin films.
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