Binary compound semiconductor of (CdS) and copper doped (CdS: Cu) thin films have been deposited onto glass substrates at substrate temperature (T =653 K) by spray technique. Different doped films were prepared using different concentrations of Cu (0.1-2%). The effect of copper doping on some physical properties of the prepared films of thickness (0.9 0.05 um) was investigated. The structural, optical and electrical properties of the films have been studied using X-ray diffraction, optical transmission spectra and electrical conductivity respectively. These properties were found to be strongly dependent on the doping concentration. The polycrystalline films with a hexagonal structure for undoped and a mixed (hexagonal+cubic) structure for doped films have been obtained. The optical band gap of these films was found to be decreased from 2.451 to 2.410 eV with increase Cu concentration. The electrical conductivity of these films was found to be decreased initially with increasing Cu concentration, while it started to increase for doping values over 1% of Cu, and a conversion of the conductivity type of the films (from n-type to p-type) was observed at doping level above 1%.

Investigation of the physical properties on an n- type GaP single crystal semiconductor compound is given. The magneto-optical properties, magneto photoconductivity, Hall effect as well as Seebeck and Nernst effects are measured for the same sample. A constructed basic experimental set-up for conducting these measurements is shown. An optical cryostat which is capable to control the sample temperature in the range of (200-340 K) is shown. The cryostat is also suitable for measuring electrical as well as thermal measurements. Results of energy gap is obtained from both optical absorption method and photoconductivity measurements for zero and under the influence of a magnetic field .Reduced effective mass from both the magneto-optical and magneto-photoconductivity technique is given and explained. From the combination between electrical and thermal experiments, the method of four coefficients (Conductivity, Hall effect, Seebeck and Nernst) is explained as a direct measurement for both the density of state effective mass and the scattering parameter.