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Minsk, Belarus was the site of the NATO ARW on Wide Band-Gap
electronic Materials May 3 through 6,1994; 143 participants and
observers from 15 countries met for the NATO Advanced Research
Workshop on Wide Band-Gap Electronic Materials (NATO ARW). The
meeting was marked by a remarkable free exchange between east and
west on these topics by revealing technical achievements not widely
known or available in the west because ofpast political climate or
present economic realities in the Newly IndependentStates. The
topics ranged from electron doping of diamond, n-type diamond,
negative electron affinity ofdiamond, applications of aluminum
nitride, doping ofboron nitride, wideband gap electronic
applications, to nanophase diamond. Of the many high-lights during
the scientific meetings, an energy sub band due to defects in the
diamond lattice was described. These defects areresponsible for the
light emission from a diamond Light Emitting Diode (LED) which was
demonstrated at the NATO ARW. This diamond LED can emitred, green,
and blue light. The potential for "high tech" nanostructure
electronic devices such as quantum transistors was described which
mightsome day revolutionize electronics. The prospectsofaluminum
nitride for acusto devices, piezodevices, and
electroluminescencedevices were discussed.
Minsk, Belarus was the site of the NATO ARW on Wide Band-Gap
electronic Materials May 3 through 6,1994; 143 participants and
observers from 15 countries met for the NATO Advanced Research
Workshop on Wide Band-Gap Electronic Materials (NATO ARW). The
meeting was marked by a remarkable free exchange between east and
west on these topics by revealing technical achievements not widely
known or available in the west because ofpast political climate or
present economic realities in the Newly IndependentStates. The
topics ranged from electron doping of diamond, n-type diamond,
negative electron affinity ofdiamond, applications of aluminum
nitride, doping ofboron nitride, wideband gap electronic
applications, to nanophase diamond. Of the many high-lights during
the scientific meetings, an energy sub band due to defects in the
diamond lattice was described. These defects areresponsible for the
light emission from a diamond Light Emitting Diode (LED) which was
demonstrated at the NATO ARW. This diamond LED can emitred, green,
and blue light. The potential for "high tech" nanostructure
electronic devices such as quantum transistors was described which
mightsome day revolutionize electronics. The prospectsofaluminum
nitride for acusto devices, piezodevices, and
electroluminescencedevices were discussed.
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