The International Symposium on the Science and Technology of Mesoscopic Structures was held at Shin-Kohkaido in Nara from November 6-8, 1991. The symposium was sponsored by the International Institute for Advanced Study and partly by Nara Prefecture, Nara City, Nara Convention Bureau, and the Ministry of Education, Science and Culture of Japan, as well as industrial organizations. We would like to acknowledge the support of the symposium by these or ganizations. The scope of the symposium was planned by the organizing committee to cover outstanding contributors in the fields of (1) ballistic transport, (2) electron wave guides and interference effects, (3) quantum confinement effects, (4) tunneling phenomena, (5) optical nonlinearity, and (6) fabrication technology of meso scopic structures. Twenty-six invited speakers were selected from the United States, Europe, and Japan. In addition twenty-four contributed papers were accepted for presentation at the poster session. These papers are included in the proceedings. We are grateful to the organizing committee, Ms. Y oshiko Kusaki of the Inter national Institute for Advanced Study for the secretarial service, and Dr. Nobuya Mori, Osaka University, for his scientific cooperation. Thanks are also due to the authors and the participants for their contributions to a successful symposium."

This volume contains the proceedings of the Fourteenth Thniguchi Symposium on the Theory of Condensed Matter, which was held from November 10 to 14, 1991, at the Shima Kanko Hotel, Shima, Japan. The topic of the symposium was Physics 0/ Mesoscopic Systems. Mesoscopic systems have been developed band in band with the recent progress in nanotechnology and are the melting pot of basic science and technology. In nanostructures, the quantum effect of the electron wave manifests itself because of the limited dimensionality of the structure. The most typical features of these structures are the discreteness of the energy spectrum and the interference effect of electron waves, which have led to various fascinating phenomena. The purpose of this symposium was to discuss the latest developments in mesoscopic systems, especially transport phenomena, from the viewpoint of basic physics. This volume starts with an introduction to the field of mesoscopic systems together with the paper by Prof. R. Kubo, who was the first to note the existence of particular features of discrete energy levels in small metallic particles. In Part II the electronic states of quantum dots and the conductance through them are discussed. Tunneling via small structures and junctions is studied in Part ill.

This book contains the invited review papers and contributed papers presented at the University of Tokyo International Symposium on Anderson localization. It provides an overview of rapidly developing topics related to this area, including the metal-insulator transition in doped semiconductors and disordered metals, weak localization phenomena in two- and three-dimensional dirty metals and semiconductor space-charge layers, the quantum Hall effect, and localization in strong magnetic fields, together with the newer subjects of quasicrystals and mesoscopic systems. Quasicrystals are particularly interesting because their wave functions exhibit self-similarity and are marginally localized or delocalized, while in mesoscopic systems the conductance is no longer a self-averaged quantity and fluctuations play an essential role. This volume should be of use to anyone interested in the development of Anderson localization.

Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir, cuits. Smaller fea ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. The device which plays an important role in LSIs is MOSFETs (metal oxide-semiconductor field-effect transistors). In MOSFETs an inversion layer is formed at the interface of silicon and its insulating oxide. The inversion layer provides a unique two-dimensional (2D) system in which the electron concentration is controlled almost freely over a very wide range. Physics of such 2D systems was born in the mid-1960s together with the development of MOSFETs. The integer quantum Hall effect was first discovered in this system."

Graphene has been attracting growing attentions in physics, chemistry, and device applications after the discovery of micromechanically cleaved graphene sheet by A. Geim and K. Novoselov, who were awarded the 2010 Nobel Prize in Physics. The electronic structure of graphene, which is described in terms of massless Dirac fermions, brings about unconventional electronic properties, which are not only an important basic issue in condensed matter physics but also a promising target of cutting-edge electronics/spintronics device applications. Meanwhile, from chemistry aspect, graphene is the extreme of condensed polycyclic hydrocarbon molecules extrapolated to infinite size. Here, the concept on aromaticity, which organic chemists utilize, is applicable. Interesting issues appearing between physics and chemistry are pronounced in nanosized graphene (nanographene), as we recognize the importance of the shape of nanographene in understanding its electronic structure. This book comprehensively discusses the fundamental issues related to the electronic, magnetic, and chemical properties of condensed polycyclic hyodrocarbon molecules, nanographene, and graphene.