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Rad-hard Semiconductor Memories is intended for researchers and
professionals interested in understanding how to design and make a
preliminary evaluation of rad-hard semiconductor memories, making
leverage on standard CMOS manufacturing processes available from
different silicon foundries and using different technology nodes.
In the first part of the book, a preliminary overview of the
effects of radiation in space, with a specific focus on memories,
will be conducted to enable the reader to understand why specific
design solutions are adopted to mitigate hard and soft errors. The
second part will be devoted to RHBD (Radiation Hardening by Design)
techniques for semiconductor components with a specific focus on
memories. The approach will follow a top-down scheme starting from
RHBD at architectural level (how to build a rad-hard floor-plan),
at circuit level (how to mitigate radiation effects by handling
transistors in the proper way) and at layout level (how to shape a
layout to mitigate radiation effects). After the description of the
mitigation techniques, the book enters in the core of the topic
covering SRAMs (synchronous, asynchronous, single port and dual
port) and PROMs (based on AntiFuse OTP technologies), describing
how to design a rad-hard flash memory and fostering RHBD toward
emerging memories like ReRAM. The last part will be a leap into
emerging memories at a very early stage, not yet ready for
industrial use in silicon but candidates to become an option for
the next wave of rad-hard components. Technical topics discussed in
the book include: - Radiation effects on semiconductor components
(TID, SEE) - Radiation Hardening by Design (RHBD) Techniques -
Rad-hard SRAMs - Rad-hard PROMs - Rad-hard Flash NVMs - Rad-hard
ReRAMs - Rad-hard emerging technologies
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