Gettering Defects in Semiconductors fulfills three basic purposes:

- to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics;

- to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists;

- to fill a gap in the contemporary literature on the underlying semiconductor-material theory.

The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid-state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.

This book helps the reader become familiar with various mathematical models for mechanical, electrical, physical, atronomical, chemical, biological, ecological, cybernetical and other systems and processes. The models examined are evolutionary models, i.e. the models of time-varying processes known as dynamic systems, such as fluid flow, biological processes, oscillations in mechanical and electromagnetic systems, and social systems. The book shows readers how to identify appropriate situations for modelling, how to address difficulties in creating models, and how to learn what mathematics teaches us about the modelling of dynamical phenomena in our surrounding world. It is interesting for a wide spectrum of readers, students of natural science and engineering, and also for researchers in these fields.

This book has come into being as a result ofthe author's lectures on mathematical modelling rendered to the students, BS and MS degree holders specializing in applied mathematics and computer science and to post-graduate students in exact sciences of the Nizhny Novgorod State University after N. . Lobatchevsky. These lectures are adapted and presented as a single whole ab out mathematical models and modelling. This new course of lectures appeared because the contemporary Russian educational system in applied mathematics rested upon a combination of fundamental and applied mathematics training; this way of training oriented students upon solving only the exactly stated mathematical problems, and thus there was created a certain estrangement to the most essential stages and sides of real solutions for applied problems, such as thinking over and deeply piercing the essence of a specific problem and its mathematical statement. This statement embraces simplifications, adopted idealizations and creating a mathematical model, its correction and matching the results obtained against a real system. There also existed another main objective, namely to orient university graduates in their future research not only upon purely mathematical issues but also upon comprehending and widely applying mathematics as a universal language of contemporary exact science, and mathematical modelling as a powerful me ans for studying nature, engineering and human society.

Gettering Defects in Semiconductors fulfills three basic purposes:

- to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics;

- to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists;

- to fill a gap in the contemporary literature on the underlying semiconductor-material theory.

The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid-state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.