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Advances in the semiconductor technology have enabled steady,
exponential im- provement in the performance of integrated
circuits. Miniaturization allows the integration of a larger number
of transistors with enhanced switching speed. Novel transistor
structures and passivation materials diminish circuit delay by
minimizing parasitic electrical capacitance. These advances,
however, pose several challenges for the thermal engineering of
integrated circuits. The low thermal conductivities of passivation
layers result in large temperature rises and temperature gradient
magni- tudes, which degrade electrical characteristics of
transistors and reduce lifetimes of interconnects. As dimensions of
transistors and interconnects decrease, the result- ing changes in
current density and thermal capacitance make these elements more
susceptible to failure during brief electrical overstress. This
work develops a set of high-resolution measurement techniques which
de- termine temperature fields in transistors and interconnects, as
well as the thermal properties of their constituent films. At the
heart of these techniques is the thermore- flectance thermometry
method, which is based on the temperature dependence of the
reflectance of metals. Spatial resolution near 300 nm and temporal
resolution near IOns are demonstrated by capturing transient
temperature distributions in intercon- nects and
silicon-on-insulator (SOl) high-voltage transistors. Analyses of
transient temperature data obtained from interconnect structures
yield thermal conductivities and volumetric heat capacities of thin
films.
Advances in the semiconductor technology have enabled steady,
exponential im- provement in the performance of integrated
circuits. Miniaturization allows the integration of a larger number
of transistors with enhanced switching speed. Novel transistor
structures and passivation materials diminish circuit delay by
minimizing parasitic electrical capacitance. These advances,
however, pose several challenges for the thermal engineering of
integrated circuits. The low thermal conductivities of passivation
layers result in large temperature rises and temperature gradient
magni- tudes, which degrade electrical characteristics of
transistors and reduce lifetimes of interconnects. As dimensions of
transistors and interconnects decrease, the result- ing changes in
current density and thermal capacitance make these elements more
susceptible to failure during brief electrical overstress. This
work develops a set of high-resolution measurement techniques which
de- termine temperature fields in transistors and interconnects, as
well as the thermal properties of their constituent films. At the
heart of these techniques is the thermore- flectance thermometry
method, which is based on the temperature dependence of the
reflectance of metals. Spatial resolution near 300 nm and temporal
resolution near IOns are demonstrated by capturing transient
temperature distributions in intercon- nects and
silicon-on-insulator (SOl) high-voltage transistors. Analyses of
transient temperature data obtained from interconnect structures
yield thermal conductivities and volumetric heat capacities of thin
films.
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