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Books > Professional & Technical > Energy technology & engineering > Electrical engineering > Power generation & distribution
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SiC Power Module Design - Performance, robustness and reliability (Hardcover)
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SiC Power Module Design - Performance, robustness and reliability (Hardcover)
Series: Energy Engineering
Expected to ship within 18 - 22 working days
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High-frequency switching power semiconductor devices are at the
heart of power electronic converters. To date, these devices have
been dominated by the well-established silicon (Si) technology.
However, their intrinsic physical limits are becoming a barrier to
achieving higher performance power conversion. Wide Bandgap (WBG)
semiconductor devices offer the potential for higher efficiency,
smaller size, lighter weight, and/or longer lifetime. Applications
in power grid electronics as well as in electromobility are on the
rise, but a number of technological bottle-necks need to be
overcome if applications are to become more widespread -
particularly packaging. This book describes the development of
advanced multi-chip packaging solutions for novel WBG
semiconductors, specifically silicon carbide (SiC) power MOSFETs.
Coverage includes an introduction; multi-chip power modules; module
design and transfer to SiC technology; electrothermal,
thermo-mechanical, statistical and electromagnetic aspects of
optimum module design; high temperature capable SiC power modules;
validation technologies; degradation monitoring; and emerging
packaging technologies. The book is a valuable reference for
researchers and experts in academia and industry.
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