The mid-infrared (2-10Am) spectral region is of enormous scientific
and technological interest because it contains the strongest
fingerprint absorption bands of a number of pollutant and toxic
gases which require monitoring in a variety of different situations
(e.g., oil-rigs, coal mines, landfill sites and car exhausts) and
in concentrations, ranging from parts per billion to almost 100%.
Organic liquids, narcotics and many biological and bio-medical
analytes also have fingerprint absorptions in this spectral range.
In addition, the atmospheric transmission window between 3 Am and 5
Am enables free-space optical communications, thermal imaging and
the development of infrared counter-measures for "homeland
security." However, many of these applications require technology
based on un-cooled, efficient, inexpensive sources and detectors
which are not yet available and so wide exploitation of this
spectral range has yet to take place.
There is no doubt that the practical realisation of mid-infrared
semiconductor lasers, LEDs and detectors which can operate at room
temperature will transform them from a specialist research
curiosity to a pervasive technology that will unlock a wide variety
of applications. Many of the necessary developments depend on the
ability to fabricate suitable high-quality epitaxial materials
through the use of strained-layer engineering at the nanoscale and
to manipulate the optoelectronic properties of the corresponding
quantum device structures. There are a number of different
materials, active region designs and device structures currently
being investigated for both light sources and detectors. Many of
the salient features together with recent progress ineach of these
areas is presented in this text.
Mid-infrared Semiconductor Optoelectronics is an overview of the
current status and technological advances in this rapidly
developing area. It is divided into four parts. First, some of the
basic physics and the main problems facing the device engineer
(together with a comparison of possible solutions) are presented.
Next, there is a consideration of the different types of lasers
currently under development. For practical mid-infrared
applications semiconductor lasers must operate at room temperature
and several different approaches to achieve this, particularly
within the difficult 3a "4 Am spectral region are discussed. Part
III reviews recent work on light-emitting diodes and photodetectors
and also deals with negative luminescence. The final part of the
book is concerned with applications and highlights, once more, the
diversity and technological importance of the mid-infrared spectral
region.
The text has been produced by a world-wide authorship of experts
in mid-infrared physics and technology, each working at the cutting
edge in their own specialist area. Mid-infrared Semiconductor
Optoelectronics will be an invaluable reference for researchers and
graduate students drawn from backgrounds in physics, electronic and
electrical engineering and materials science. Its breadth and
thoroughness also make it an excellent starting point for further
research and investigation.
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