Resistive Random Access Memory (RRAM) is a transistor free
non-volatile dynamic RAM cell with very simple
Metal-Insulator-Metal (MIM) structure and very high switching speed
and high density memories. Different types of oxides like
Transition Metal Oxides, Perovskite Oxides etc are used as the
insulating dielectric layer of the capacitor like MIM structure.
This ion-conducting oxide insulating layer can change its
resistance by externally stimulated electric pulses with different
amplitude and frequency. The steps precondition the system which
can subsequently be switched between high conductive ON or Low
Resistive State (LRS) and a less conductive OFF or High Resistive
State (HRS). In this experimental study Sol-gel derived Titanium
Dioxide (TiO2) is considered as the ion conducting insulating
dielectric material of this RRAM device. Pd (Ag)/TiO2 /Pd (Ag)
Metal-Insulator-Metal structure for RRAM devices have been designed
and fabricated and studied in this book. Different analytical
models and explanations to establish the mechanism behind the
Transition metal oxide based RRAM device and Resistive Switching
phenomenon are the addition features of this book.
General
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