A major current challenge for semiconductor devices is to
develop materials for the next generation of optical communication
systems and solar power conversion applications. Recently,
extensive research has revealed that an introduction of only a few
percentages of nitrogen into III-V semiconductor lattice leads to a
dramatic reduction of the band gap. This discovery has opened the
possibility of using these material systems for applications
ranging from lasers to solar cells. "Physics and Technology of
Dilute III-V Nitride Semiconductors and Novel Dilute Nitride
Material Systems" reviews the current status of research and
development in dilute III-V nitrides, with 24 chapters from
prominent research groups covering recent progress in growth
techniques, experimental characterization of band structure,
defects carrier transport, transport properties, dynamic behavior
of N atoms, device applications, modeling of device design, novel
optoelectronic integrated circuits, and novel nitrogen containing
III-V materials.
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