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Thin Film Materials for Large Area Electronics, Volume 80 (Hardcover)
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Thin Film Materials for Large Area Electronics, Volume 80 (Hardcover)
Series: European Materials Research Society Symposia Proceedings
Expected to ship within 10 - 15 working days
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The symposium brought together more than a hundred attendees from
many countries including a significant participation from Japan and
other East-Asia countries. Many of the trends observed in the 1st
Symposium held in 1996 were confirmed: displays are indeed the main
application in LAE (photovoltaics were not included in the topics
of this symposium) and active matrix display (AMLCD) is still the
leading technology. Future AMLCDs integrating the display drivers
onto the same substrate require much faster thin-film transistors
(TFTs) than those used for LCD addressing, therefore putting a
strong demand on polysilicon performances. As a consequence the
quest for an improved low temperature, large area (and low cost)
polysilicon process is intensive and the competitors, including
direct plasma deposition and excimer laser crystallization of
amorphous layers, are reporting significant steps forward. With the
tremendous demand for efficient colour flat panel displays, other
display technologies are gaining interest. Field emission display
(FED) is one of them. FEDs based on amorphous tetrahedral carbon
thin-films are stimulating intensive studies on the optoelectronic
properties of this complex material.
Large area pixellized sensors for x-ray radiography and document
scanning is another field of application in LAE which has recently
reached initial production. Using a TFT or diode pixel addressing
similar to AMLCD, this kind of device benefits from most of the
AMLCD technology. However these devices present an increased
complexity and stringent specifications on noise which in turn
means materials with improved electronic transport properties.
Finally, LAE is a fast developing area in thin-film research and
technology. Initially an all-silicon domain, it now involves a
large range of thin-film semiconductors and dielectrics, whose
properties need to be fully understood and for which flexible and
efficient processes have still to be developed.
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