Doping Engineering for Front-End Processing: Volume 1070 (Paperback)

Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.

General

Imprint:	Cambridge UniversityPress
Country of origin:	United Kingdom
Series:	MRS Proceedings
Release date:	June 2014
First published:	June 2014
Editors:	B J Pawlak • M. L. Pelaz • M Law • K. Surugo
Dimensions:	229 x 152 x 18mm (L x W x T)
Format:	Paperback - Trade
Pages:	336
ISBN-13:	978-1-107-40854-8
Categories:	Books > Professional & Technical > Mechanical engineering & materials > Materials science > General Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
LSN:	1-107-40854-7
Barcode:	9781107408548

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