Doping Engineering for Front-End Processing: Volume 1070 (Hardcover)

Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.

General

Imprint:	Materials Research Society
Country of origin:	United States
Series:	MRS Proceedings
Release date:	October 2008
First published:	October 2008
Editors:	B J Pawlak • M. L. Pelaz • M Law • K. Surugo
Dimensions:	235 x 160 x 20mm (L x W x T)
Format:	Hardcover - Cloth over boards
Pages:	319
ISBN-13:	978-1-60511-040-0
Categories:	Books > Professional & Technical > Mechanical engineering & materials > Materials science > General
LSN:	1-60511-040-X
Barcode:	9781605110400

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