During the last decade many new concepts have been proposed for
improving the performance of power MOSFETs. The results of this
research are dispersed in the technical literature among journal
articles and abstracts of conferences. Consequently, the
information is not readily available to researchers and practicing
engineers in the power device community. There is no cohesive
treatment of the ideas to provide an assessment of the relative
merits of the ideas.
"Advanced Power MOSFET Concepts" provides an in-depth treatment
of the physics of operation of advanced power MOSFETs. Analytical
models for explaining the operation of all the advanced power
MOSFETs will be developed. The results of numerical simulations
will be provided to give additional insight into the device physics
and validate the analytical models. The results of two-dimensional
simulations will be provided to corroborate the analytical models
and give greater insight into the device operation.
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