This book comprehensively covers the areas of materials growth,
characterisation and descriptions for the new devices in
siliconheterostructure material systems. In recent years, the
development of powerful epitaxial growth techniques such as
molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour
deposition (UHVCVD) and other low temperature epitaxy techniques
has given rise to a new area of research of bandgap engineering in
silicon-based materials. This has paved the way not only for
heterojunction bipolar and field effect transistors, but also for
other fascinating novel quantum devices. This book provides an
excellent introduction and valuable references for postgraduate
students and research scientists.
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