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Technology Computer Aided Design - Simulation for VLSI MOSFET (Hardcover)
Loot Price: R5,806
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Technology Computer Aided Design - Simulation for VLSI MOSFET (Hardcover)
Expected to ship within 12 - 17 working days
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Responding to recent developments and a growing VLSI circuit
manufacturing market, Technology Computer Aided Design: Simulation
for VLSI MOSFET examines advanced MOSFET processes and devices
through TCAD numerical simulations. The book provides a balanced
summary of TCAD and MOSFET basic concepts, equations, physics, and
new technologies related to TCAD and MOSFET. A firm grasp of these
concepts allows for the design of better models, thus streamlining
the design process, saving time and money. This book places
emphasis on the importance of modeling and simulations of VLSI MOS
transistors and TCAD software. Providing background concepts
involved in the TCAD simulation of MOSFET devices, it presents
concepts in a simplified manner, frequently using comparisons to
everyday-life experiences. The book then explains concepts in
depth, with required mathematics and program code. This book also
details the classical semiconductor physics for understanding the
principle of operations for VLSI MOS transistors, illustrates
recent developments in the area of MOSFET and other electronic
devices, and analyzes the evolution of the role of modeling and
simulation of MOSFET. It also provides exposure to the two most
commercially popular TCAD simulation tools Silvaco and Sentaurus. *
Emphasizes the need for TCAD simulation to be included within VLSI
design flow for nano-scale integrated circuits * Introduces the
advantages of TCAD simulations for device and process technology
characterization * Presents the fundamental physics and mathematics
incorporated in the TCAD tools * Includes popular commercial TCAD
simulation tools (Silvaco and Sentaurus) * Provides
characterization of performances of VLSI MOSFETs through TCAD tools
* Offers familiarization to compact modeling for VLSI circuit
simulation R&D cost and time for electronic product development
is drastically reduced by taking advantage of TCAD tools, making it
indispensable for modern VLSI device technologies. They provide a
means to characterize the MOS transistors and improve the VLSI
circuit simulation procedure. The comprehensive information and
systematic approach to design, characterization, fabrication, and
computation of VLSI MOS transistor through TCAD tools presented in
this book provides a thorough foundation for the development of
models that simplify the design verification process and make it
cost effective.
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