By exploiting the novel properties of quantum dots and nanoscale
Aharonov Bohm rings together with the electronic and magnetic
properties of various semiconductor materials and graphene,
researchers have conducted numerous theoretical and computational
modeling studies and experimental tests that show promising
behavior for spintronics applications. Spin polarization and
spin-filtering capabilities and the ability to manipulate the
electron spin state through external magnetic or electric fields
have demonstrated the promise of workable nanoscale devices for
computing and memory applications. This book provides researchers
investigating this cutting-edge field with detailed background
descriptions of spin-based effects and devices and their
theoretical analysis in nanoelectronic circuits.
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