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Books > Professional & Technical > Technology: general issues > Technical design > Computer aided design (CAD)
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Microwave Metal Semiconductor Field Effect Transistors and High Electron Mobility Transistors (Hardcover)
Loot Price: R4,355
Discovery Miles 43 550
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Microwave Metal Semiconductor Field Effect Transistors and High Electron Mobility Transistors (Hardcover)
Series: Microwave Library
Expected to ship within 12 - 17 working days
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This book takes the reader from the basic operating principles of
the microwave MESFET and HEMT to the application of device models
in modern CAD programmes. In addition to explaining device
operation and modelling, the book provides detailed specific
algorithms which can be used to efficiently determine the
parameters needed to utilize the available device models. Detailed
comparisons of MESFET and HEMT performance are presented, and
ultimate limitations to these devices are discussed. This book is
designed for microwave device and circuit design engineers, GaAs
device and MMIC design engineers, MMIC and Hybrid circuit design
engineers, and researchers in large signal device modelling.
General
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