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Books > Professional & Technical > Technology: general issues > Technical design > Computer aided design (CAD)

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Microwave Metal Semiconductor Field Effect Transistors and High Electron Mobility Transistors (Hardcover) Loot Price: R3,818

Discovery Miles 38 180

Repayment Terms: R358 pm x 12*

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Microwave Metal Semiconductor Field Effect Transistors and High Electron Mobility Transistors (Hardcover): J.Michael Golio

Microwave Metal Semiconductor Field Effect Transistors and High Electron Mobility Transistors (Hardcover)

J.Michael Golio

Series: Microwave Library

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Loot Price R3,818 Discovery Miles 38 180 | Repayment Terms: R358 pm x 12*

Expected to ship within 10 - 15 working days

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This book takes the reader from the basic operating principles of the microwave MESFET and HEMT to the application of device models in modern CAD programmes. In addition to explaining device operation and modelling, the book provides detailed specific algorithms which can be used to efficiently determine the parameters needed to utilize the available device models. Detailed comparisons of MESFET and HEMT performance are presented, and ultimate limitations to these devices are discussed. This book is designed for microwave device and circuit design engineers, GaAs device and MMIC design engineers, MMIC and Hybrid circuit design engineers, and researchers in large signal device modelling.

General

Imprint:	Artech House Publishers
Country of origin:	United States
Series:	Microwave Library
Release date:	February 1991
First published:	February 1991
Editors:	J.Michael Golio
Dimensions:	229 x 152 x 23mm (L x W x T)
Format:	Hardcover - Laminated cover
Pages:	368
ISBN-13:	978-0-89006-426-9
Categories:	Books > Professional & Technical > Technology: general issues > Technical design > Computer aided design (CAD) Promotions
LSN:	0-89006-426-1
Barcode:	9780890064269