This book explains the physics and properties of multi-gate
field-effect transistors (MuGFETs), how they are made and how
circuit designers can use them to improve the performances of
integrated circuits. It covers the emergence of quantum effects due
to the reduced size of the devices and describes the evolution of
the MOS transistor from classical structures to SOI
(silicon-on-insulator) and then to MuGFETs.
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