When you see a nicely presented set of data, the natural response
is: "How did they do that; what tricks did they use; and how can I
do that for myself?" Alas, usually, you must simply keep wondering,
since such tricks-of- the-trade are usually held close to the vest
and rarely divulged. Shamefully ignored in the technical
literature, measurement and modeling of high-speed semiconductor
devices is a fine art. Robust measuring and modeling at the levels
of performance found in modern SiGe devices requires extreme
dexterity in the laboratory to obtain reliable data, and then a
valid model to fit that data.
Drawn from the comprehensive and well-reviewed "Silicon
Heterostructure Handbook," this volume focuses on measurement and
modeling of high-speed silicon heterostructure devices. The chapter
authors provide experience-based tricks-of-the-trade and the subtle
nuances of measuring and modeling advanced devices, making this an
important reference for the semiconductor industry. It includes
easy-to-reference appendices covering topics such as the properties
of silicon and germanium, the generalized Moll-Ross relations, the
integral charge-control model, and sample SiGe HBT compact model
parameters.
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