Measurement and Modeling of Silicon Heterostructure Devices (Hardcover)

When you see a nicely presented set of data, the natural response is: "How did they do that; what tricks did they use; and how can I do that for myself?" Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data.

Drawn from the comprehensive and well-reviewed "Silicon Heterostructure Handbook," this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

General

Imprint:	Crc Press
Country of origin:	United States
Release date:	December 2007
First published:	December 2007
Authors:	John D. Cressler
Dimensions:	254 x 178 x 20mm (L x W x T)
Format:	Hardcover
Pages:	200
ISBN-13:	978-1-4200-6692-0
Categories:	Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Circuits & components Promotions
LSN:	1-4200-6692-7
Barcode:	9781420066920

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