What seems routine today was not always so. The field of Si-based
heterostructures rests solidly on the shoulders of materials
scientists and crystal growers, those purveyors of the
semiconductor "black arts" associated with the deposition of
pristine films of nanoscale dimensionality onto enormous Si wafers
with near infinite precision. We can now grow near-defect free,
nanoscale films of Si and SiGe strained-layer epitaxy compatible
with conventional high-volume silicon integrated circuit
manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon
Heterostructure Devices tells the materials side of the story and
details the many advances in the Si-SiGe strained-layer epitaxy for
device applications.
Drawn from the comprehensive and well-reviewed "Silicon
Heterostructure Handbook," this volume defines and details the many
advances in the Si/SiGe strained-layer epitaxy for device
applications. Mining the talents of an international panel of
experts, the book covers modern SiGe epitaxial growth techniques,
epi defects and dopant diffusion in thin films, stability
constraints, and electronic properties of SiGe, strained Si, and
Si-C alloys. It includes appendices on topics such as the
properties of Si and Ge, the generalized Moll-Ross relations,
integral charge-control relations, and sample SiGe HBT compact
model parameters.
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