Silicon-germanium Heterojunction Bipolar Transistors (Hardcover)

This resource provides engineers with a comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a semi-conductor technology that is expected to revolutionise the communications industry by offering low-cost, high-speed solutions for emerging communications needs. It offers practitioners and students a from-the-ground-up understanding of SiGe HBT devices and technology from a very broad perspective. The text covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe. This reference explains how to design, simulate, fabricate and measure a SiGe HBT, and offers an understanding of the optimization issues and design tradeoffs of SiGe HBTs and RF/microwave circuits built with this new technology.

General

Imprint:	Artech House Publishers
Country of origin:	United States
Release date:	December 2002
First published:	December 2002
Authors:	John D. Cressler • Guofu Niu
Dimensions:	234 x 156 x 33mm (L x W x T)
Format:	Hardcover - Laminated cover
Pages:	588
ISBN-13:	978-1-58053-361-4
Categories:	Books > Professional & Technical > Electronics & communications engineering > Communications engineering / telecommunications > General Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors Promotions
LSN:	1-58053-361-2
Barcode:	9781580533614

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