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RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors (Hardcover, 1st ed. 2022)
Loot Price: R2,495
Discovery Miles 24 950
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RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors (Hardcover, 1st ed. 2022)
Expected to ship within 12 - 17 working days
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This book presents a variety of techniques using high-frequency
(RF) and time-domain measurements to understand the electrical
performance of novel, modern transistors made of materials such as
graphene, carbon nanotubes, and silicon-on-insulator, and using new
transistor structures. The author explains how to use conventional
RF and time- domain measurements to characterize the performance of
the transistors. In addition, he explains how novel transistors may
be subject to effects such as self-heating, period-dependent
output, non-linearity, susceptibility to short-term degradation,
DC-invisible structural defects, and a different response to DC and
transient inputs. Readers will understand that in order to fully
understand and characterize the behavior of a novel transistor,
there is an arsenal of dynamic techniques available. In addition to
abstract concepts, the reader will learn of practical tips required
to achieve meaningful measurements, and will understand the
relationship between these measurements and traditional,
conventional DC characteristics.
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