Since scaling of CMOS is reaching the nanometer area serious
limitations enforce the introduction of novel materials, device
architectures and device concepts. Multi-gate devices employing
high-k gate dielectrics are considered as promising solution
overcoming these scaling limitations of conventional planar bulk
CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in
Emerging Multi-Gate CMOS Technologies provides a technology
oriented assessment of analog and mixed-signal circuits in emerging
high-k and multi-gate CMOS technologies.
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