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Zinc Oxide - A Material for Micro- and Optoelectronic Applications - Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications, held in St. Petersburg, Russia, from 23 to 25 June 2004 (Paperback, 2005 ed.)
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Zinc Oxide - A Material for Micro- and Optoelectronic Applications - Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications, held in St. Petersburg, Russia, from 23 to 25 June 2004 (Paperback, 2005 ed.)
Series: NATO Science Series II: Mathematics, Physics and Chemistry, 194
Expected to ship within 10 - 15 working days
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Recently, a significant effort has been devoted to the
investigation of ZnO as a suitable semiconductor for UV
light-emitting diodes, lasers, and detectors and hetero-substrates
for GaN. Research is driven not only by the technological
requirements of state-of-the-art applications but also by the lack
of a fundamental understanding of growth processes, the role of
intrinsic defects and dopants, and the properties of hydrogen. The
NATO Advanced Research Workshop on "Zinc oxide as a material for
micro- and optoelectronic applications," held from June 23 to June
25 2004 in St. Petersburg, Russia, was organized accordingly and
started with the growth of ZnO. A variety of growth methods for
bulk and layer growth were discussed. These techniques comprised
growth methods such as closed space vapor transport (CSVT),
metal-organic chemical vapor deposition, reactive ion sputtering,
and pulsed laser deposition. From a structural point of view using
these growth techniques ZnO can be fabricated ranging from single
crystalline bulk material to polycrystalline ZnO and nanowhiskers.
A major aspect of the ZnO growth is doping. n-type doping is
relatively easy to accomplish with elements such al Al or Ga. At
room temperature single crystal ZnO exhibits a resistivity of about
0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier
concentration of 10 cm . In n-type ZnO two shallow donors are
observable with activation energies of 30 - 40 meV and 60 - 70 meV.
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