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Zinc Oxide - A Material for Micro- and Optoelectronic Applications - Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications, held in St. Petersburg, Russia, from 23 to 25 June 2004 (Hardcover, 2005 ed.) Loot Price: R4,375
Discovery Miles 43 750
Zinc Oxide - A Material for Micro- and Optoelectronic Applications - Proceedings of the NATO Advanced Research Workshop on Zinc...

Zinc Oxide - A Material for Micro- and Optoelectronic Applications - Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications, held in St. Petersburg, Russia, from 23 to 25 June 2004 (Hardcover, 2005 ed.)

Norbert H Nickel, Evgenii Terukov

Series: NATO Science Series II: Mathematics, Physics and Chemistry, 194

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Loot Price R4,375 Discovery Miles 43 750 | Repayment Terms: R410 pm x 12*

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Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on "Zinc oxide as a material for micro- and optoelectronic applications," held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV.

General

Imprint: Springer-Verlag New York
Country of origin: United States
Series: NATO Science Series II: Mathematics, Physics and Chemistry, 194
Release date: August 2005
First published: 2005
Editors: Norbert H Nickel • Evgenii Terukov
Dimensions: 232 x 156 x 15mm (L x W x T)
Format: Hardcover
Pages: 240
Edition: 2005 ed.
ISBN-13: 978-1-4020-3473-2
Categories: Books > Professional & Technical > Mechanical engineering & materials > Materials science > General
LSN: 1-4020-3473-3
Barcode: 9781402034732

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