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Books > Professional & Technical > Mechanical engineering & materials > Materials science
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Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon (Hardcover, 2004 ed.)
Loot Price: R8,717
Discovery Miles 87 170
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Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon (Hardcover, 2004 ed.)
Series: Computational Microelectronics
Expected to ship within 10 - 15 working days
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Basically all properties of semiconductor devices are influenced by
the distribution of point defects in their active areas. This book
contains the first comprehensive review of the properties of
intrinsic point defects, acceptor and donor impurities, isovalent
atoms, chalcogens, and halogens in silicon, as well as of their
complexes. Special emphasis is placed on compiling the structures,
energetic properties, identified electrical levels and
spectroscopic signatures, and the diffusion behavior from
experimental and theoretical investigations. In addition, the book
discusses the fundamental concepts of silicon and its defects, the
electron system, diffusion, thermodynamics, and reaction kinetics
which form the scientific basis needed for a thorough understanding
of the text. Therefore, the book is able to provide an introduction
to newcomers in this field up to a comprehensive reference for
experts in process technology, solid-state physics, and simulation
of semiconductor processes.
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