So far a detailed study on Heterojunction Bipolar Transistor made
of Inp/InGaAs with nearly Gaussian Base doping profile, has not
been done .Because of that a detailed study on Inp-InGaAs HBT is
presented in this work. Two important factors for determining the
performance of a transistor are base transit time and current gain
( ). Variations of base transit time and gain with temperature and
other device parameters for both uniform and non-uniform base
doping profiles are studied here. The non-uniform base doping
profile studied here is nearly Gaussian in nature. Dependence of
diffusion coefficient (Dn) on temperature (T) and base doping
concentration (Na) are taken into account in this study. Dependence
on composition variation in the base is also taken into
consideration. Also studied Gummel No in relation with base doping
concentration (Na(x)). I think this work may be helpful for the
final year students of Bachelor Degree and Master Degree, if they
work on HBTs and their different device parameters and all those
who have interest in latest works and developments in the field of
Electronic Devices."
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