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Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990 - Symposium Held April 10-12, 2007, San Francisco, California, U.S.A. (Paperback)
Loot Price: R829
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Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990 - Symposium Held April 10-12, 2007, San Francisco, California, U.S.A. (Paperback)
Series: MRS Proceedings
Expected to ship within 12 - 17 working days
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In 2004, the microelectronics industry quietly ushered in the
Nanoelectronics Era with the mass production of sub-100nm node
devices. The current leading-edge semiconductor chips in mass
production - the so-called 90nm node devices - have a transistor
gate length of less than 50nm. This rapid technological advancement
in the semiconductor industry has been made possible by innovations
in materials employed in both transistor fabrication
(front-end-of-the-line, FEOL) and interconnect fabrication
(back-end-of-the-line, BEOL). The 90nm node BEOL features copper
(Cu) interconnects and dielectric materials with a low-dielectric
constant (k) of about 3.0. However, for the next generations of
65nm node and beyond, evolutionary and revolutionary innovations in
BEOL materials and processes are needed to fuel the continued,
healthy growth of the semiconductor. This book provides a forum to
exchange the latest advances in materials, processes, integration,
and reliability in advanced interconnects and packaging. The book
also addressed interconnects for emerging technologies, including
3D chip stacking and optical interconnects, as well as
interconnects for optoelectronics, plastic electronics and
molecular electronics.
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