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Thin Film Ferroelectric Materials and Devices (Hardcover, 1997 ed.)
Loot Price: R4,315
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Thin Film Ferroelectric Materials and Devices (Hardcover, 1997 ed.)
Series: Electronic Materials: Science & Technology, 3
Expected to ship within 12 - 17 working days
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The past five years have witnessed some dramatic developments in
the general area of ferroelectric thin films materials and devices.
Ferroelectrics are not new materials by any stretch ofimagination.
Indeed, they have been known since the early partofthis century and
popular ferroelectric materials such as Barium Titanate have been
in use since the second world war. In the late sixties and
seventies, a considerable amountofresearch and development effort
was made to create a solid state nonvolatile memory using
ferroelectrics in a vary simple matrix-addressed scheme. These
attempts failed primarily due to problems associated with either
the materials ordue to device architectures. The early eighties saw
the advent of new materials processing approaches, such as sol-gel
processing, that enabled researchers to fabricate sub-micron thin
films of ferroelectric materials on a silicon substrate. These
pioneering developments signaled the onsetofa revival in the
areaofferroelectric thin films, especially ferroelectric
nonvolatile memories. Research and development effort in
ferroelectric materials and devices has now hit a feverish pitch,
Many university laboratories, national laboratories and advanced
R&D laboratories oflarge IC manufacturers are deeply involved
in the pursuit of ferroelectric device technologies. Many companies
worldwide are investing considerable manpower and resources into
ferroelectric technologies. Some have already announced products
ranging from embedded memories in micro controllers, low density
stand-alone memories, microwave circuit elements, andrf
identification tags. There is now considerable optimism that
ferroelectric devices andproducts will occupy a significant
market-share in the new millennium."
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