III-Nitride Electronic Devices, Volume 102 (Hardcover)

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more.

General

Imprint:	Academic Press Inc
Country of origin:	United States
Series:	Semiconductors and Semimetals
Release date:	October 2019
First published:	2019
Volume editors:	Rongming Chu • Keisuke Shinohara
Dimensions:	229 x 152mm (L x W)
Format:	Hardcover
Pages:	546
ISBN-13:	978-0-12-817544-6
Categories:	Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > General Promotions
LSN:	0-12-817544-3
Barcode:	9780128175446

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