Chemical-mechanical planarization (CMP) has emerged over the past
few years as a key enabling technology in the relentless drive of
the semiconductor industry towards smaller, faster and less
expensive interconnects. However, there are still many gaps in the
fundamental understanding of the overall CMP process and the
associated defect and contamination issues. This book brings
together many of the active players in the field to focus on the
interdisciplinary nature of these challenges. It reflects, to some
extent, the role played by both academic institutions and
multinational corporations in opening up the frontiers in the field
of CMP for wider dissemination. Both experimental and theoretical
contributions are included. Topics include: overview and oxide
polishing; pads and related issues; metal polishing - W and Al;
copper polishing and related issues; CMP modeling and fluid flow;
and particle adhesion and post-polish cleaning.
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