The interaction of semiconductor surfaces with deposited metals is
very important for understanding many aspects of the behavior of
microelectronic devices. The early stages of metal-semiconductor
interface formation are amenable to analysis with surface sensitive
techniques. The most important characteristic of metal
semiconductor interface is nature of the potential barrier between
the Fermi level in the metal and the majority carrier band edge of
semiconductor of that interface. The study of metal / semiconductor
(Si) reactions are of great importance present in every
semiconductor device.The present book is an outcome of
investigations of structural, morphological, magnetic and
electrical behaviour of metal (Co, Cr, Ni) / semiconductor (Si)
system.
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