This book gives a state-of-the-art overview by internationally
recognized researchers of the architectures of breakthrough devices
required for future intelligent integrated systems. The first
section highlights Advanced Silicon-Based CMOS Technologies. New
device and functional architectures are reviewed in chapters on
Tunneling Field-Effect Transistors and 3-D monolithic Integration,
which the alternative materials could possibly use in the future.
The way we can augment silicon technologies is illustrated by the
co-integration of new types of devices, such as molecular and
resistive spintronics-based memories and smart sensors, using
nanoscale features co-integrated with silicon CMOS or above it.
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