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Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors

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Compound Semiconductors Strained Layers and Devices (Paperback, 2000 ed.) Loot Price: R4,245
Discovery Miles 42 450
Compound Semiconductors Strained Layers and Devices (Paperback, 2000 ed.): Suresh Jain, Magnus Willander, R. Van Overstraeten

Compound Semiconductors Strained Layers and Devices (Paperback, 2000 ed.)

Suresh Jain, Magnus Willander, R. Van Overstraeten

Series: Electronic Materials Series, 7

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Loot Price R4,245 Discovery Miles 42 450 | Repayment Terms: R398 pm x 12*

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During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain. 1989-1999 have been very good years for the strained-Iayer- devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break- throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi- ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per- formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de- scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.

General

Imprint: Springer-Verlag New York
Country of origin: United States
Series: Electronic Materials Series, 7
Release date: March 2014
First published: 2000
Editors: Suresh Jain • Magnus Willander • R. Van Overstraeten
Dimensions: 235 x 155 x 19mm (L x W x T)
Format: Paperback
Pages: 337
Edition: 2000 ed.
ISBN-13: 978-1-4613-7000-0
Categories: Books > Professional & Technical > Mechanical engineering & materials > Materials science > Testing of materials > General
Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
LSN: 1-4613-7000-0
Barcode: 9781461370000

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