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Books > Professional & Technical > Electronics & communications engineering > Communications engineering / telecommunications > Radio technology
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GaN and Related Alloys - 1999: Volume 595 (Paperback)
Loot Price: R952
Discovery Miles 9 520
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GaN and Related Alloys - 1999: Volume 595 (Paperback)
Series: MRS Proceedings
Expected to ship within 12 - 17 working days
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This book on gallium nitride (GaN) and associated materials focuses
on advances in basic science, as well as the rapidly maturing
technologies involving blue/green light emitters, detectors and
high-power electronics. A highlight is a report on wide-bandgap
semiconductor research done in Europe. Also reported is the
commercialization of a laser operating at 405nm wavelength with a
4000-hour device lifetime. At 450nm emission wavelength,
significant reductions in lifetime were found, and are believed to
arise from nonideal properties of the InGaN alloy used in the
active layer of the device. Additional topics include: the
significant success of transistors for microwave applications;
improvements in the epitaxy of GaN, using both selective area
growth techniques (lateral epitaxy overgrowth) and introducing
low-temperature intralayers in the films; advances in both
molecular beam epitaxy and metal-organic vapor phase epitaxy,
including several studies of quantum dot formation in strained
alloys and improvements in hydride vapor phase epitaxy,
particularly for providing very thick films.
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