Metal-semiconductor contacts are one of the most widely used
rectifying contacts in semiconductor industry. Therefore, the
fabrication of high quality Schottky contacts is essential to
improve the performance of the device. InP is a material of
particular interest for optoelectronic and high-speed electronic
devices. In view of the important applications, the fabrication of
Schottky contacts to InP is of vital importance. The contacts
formed should have electrical and thermal stability with desired
surface morphology. During the technological stages leading to the
final device, InP substrates unavoidably undergo many thermal
treatments involving rapid thermal annealing. This book includes
the fabrication and characterization of Schottky contacts to InP
formed with high temperature stable metals like ruthenium and
molybdenum. The Schottky structures formed on InP are rapid thermal
annealed and its effect on the electrical, structural properties
and deep level defects are investigated. The results presnted in
the book will be useful for those working in the field of
semiconductor Schottky contact fabrication.
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